Age, Biography and Wiki
Paul R. Berger was born on 8 May, 1963 in Ohio, is an engineer. Discover Paul R. Berger's Biography, Age, Height, Physical Stats, Dating/Affairs, Family and career updates. Learn How rich is He in this year and how He spends money? Also learn how He earned most of networth at the age of 60 years old?
Popular As |
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Occupation |
Professor |
Age |
61 years old |
Zodiac Sign |
Taurus |
Born |
8 May 1963 |
Birthday |
8 May |
Birthplace |
N/A |
Nationality |
United States |
We recommend you to check the complete list of Famous People born on 8 May.
He is a member of famous engineer with the age 61 years old group.
Paul R. Berger Height, Weight & Measurements
At 61 years old, Paul R. Berger height not available right now. We will update Paul R. Berger's Height, weight, Body Measurements, Eye Color, Hair Color, Shoe & Dress size soon as possible.
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Dating & Relationship status
He is currently single. He is not dating anyone. We don't have much information about He's past relationship and any previous engaged. According to our Database, He has no children.
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Not Available |
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Not Available |
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Paul R. Berger Net Worth
His net worth has been growing significantly in 2022-2023. So, how much is Paul R. Berger worth at the age of 61 years old? Paul R. Berger’s income source is mostly from being a successful engineer. He is from United States. We have estimated
Paul R. Berger's net worth
, money, salary, income, and assets.
Net Worth in 2023 |
$1 Million - $5 Million |
Salary in 2023 |
Under Review |
Net Worth in 2022 |
Pending |
Salary in 2022 |
Under Review |
House |
Not Available |
Cars |
Not Available |
Source of Income |
engineer |
Paul R. Berger Social Network
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Timeline
Berger was named a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2011 and was elected into the IEEE Electron Devices Society board of governors in 2020 Berger was general chair of the 2021 IEEE International Flexible Electronics Technology Conference (IFETC) in August 2021, which pivoted from Columbus, Ohio to fully virtual. Also in 2021, Berger was selected as the co-founding editor-in-chief of the new IEEE Journal on Flexible Electronics (J-FLEX), which begins as associate editor-in-chief in 2022, followed by editor-in-chief for 2023–2024.
In 1999, Berger entered the field of solution-processable flexible electronics with sabbatical visits to the Max Planck Institute for Polymer Research in Mainz, Germany and Cambridge Display Technology, then in Cambridge, England, where he generated patents on organic light-emitting diodes (OLED).
In 1998, as part of a Quantum MOS team under a DARPA Ultra project, Berger invented Si/SiGe resonant interband tunneling diodes, the first viable Si-based negative differential resistance with the potential of being fully integrated into the mainstream Si CMOS integrated circuits technology. And in 2011, Berger was elevated to IEEE Fellow for "for contributions to the understanding, development, and fabrication of silicon-based resonant interband tunneling devices and circuits."
Born in Midwestern United States, but raised in the Greater Boston, Massachusetts area, Berger attended Phillips Academy in Andover, Massachusetts. Berger received his B.S. in engineering physics, M.S in electrical and computer engineering, and Ph.D in electrical and computer engineering, all from University of Michigan, Ann Arbor campus in 1985, 1987 and 1990, respectively, under the supervision of Pallab Bhattacharya. In 1987, Berger discovered the self-assembly of III-V semiconductor quantum dots during molecular-beam epitaxy strain engineering with Bhattacharya for the formation of high-quality quantum dot laser device manufacturing. This method has made optical communication and optical networking practical for many applications, including optical data links in enterprise networks and data centers.
Paul R. Berger (born 8 May 1963) is a professor in electrical and computer engineering at Ohio State University and physics (by courtesy), and a distinguished visiting professor (Docent) at Tampere University in Finland, recognized for his work on self-assembled quantum dots under strained-layer epitaxy, quantum tunneling based semiconductor devices and solution processable flexible electronics.