Age, Biography and Wiki

Simon Sze was born on 1936, is an engineer. Discover Simon Sze's Biography, Age, Height, Physical Stats, Dating/Affairs, Family and career updates. Learn How rich is He in this year and how He spends money? Also learn how He earned most of networth at the age of 87 years old?

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Born 1936
Birthday 1936
Birthplace Nanjing, China
Date of death November 06, 2023
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We recommend you to check the complete list of Famous People born on 1936. He is a member of famous engineer with the age years old group.

Simon Sze Height, Weight & Measurements

At years old, Simon Sze height not available right now. We will update Simon Sze's Height, weight, Body Measurements, Eye Color, Hair Color, Shoe & Dress size soon as possible.

Physical Status
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Dating & Relationship status

He is currently single. He is not dating anyone. We don't have much information about He's past relationship and any previous engaged. According to our Database, He has no children.

Family
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Simon Sze Net Worth

His net worth has been growing significantly in 2022-2023. So, how much is Simon Sze worth at the age of years old? Simon Sze’s income source is mostly from being a successful engineer. He is from . We have estimated Simon Sze's net worth , money, salary, income, and assets.

Net Worth in 2023 $1 Million - $5 Million
Salary in 2023 Under Review
Net Worth in 2022 Pending
Salary in 2022 Under Review
House Not Available
Cars Not Available
Source of Income engineer

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Timeline

1957

Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963. He worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University. He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor, now widely used in non-volatile semiconductor memory devices. He has written and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field. Sze received the J. J. Ebers Award in 1991 for his work in electron devices. In 1995, he was elected a member of the National Academy of Engineering for technical and educational contributions to semiconductor devices.

1936

Simon Min Sze, or Shi Min (Chinese: 施敏; pinyin: Shī Mǐn; born 1936), is a Chinese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.